Invention Grant
- Patent Title: High speed level shifter circuit in advanced CMOS technology
- Patent Title (中): 高速电平移位电路采用先进的CMOS技术
-
Application No.: US12470943Application Date: 2009-05-22
-
Publication No.: US07902870B1Publication Date: 2011-03-08
- Inventor: Bin Jiang
- Applicant: Bin Jiang
- Applicant Address: BM
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K19/0175

Abstract:
A level shifter circuit for shifting from a first voltage level technology (such as 0.9 volt) to a second level voltage technology (such as 3.3 volt) with increased switching speed. The increased speed is achieved by adding a boost circuit to the pull-up transistors to boost the switching speed and shut itself down after the transition. The level shifter circuit does not require intermediate level transistors or intermediate level voltage sources.
Information query