Invention Grant
- Patent Title: Level shifter and semiconductor device having off-chip driver
- Patent Title (中): 具有片外驱动器的电平移位器和半导体器件
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Application No.: US12759252Application Date: 2010-04-13
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Publication No.: US07902871B2Publication Date: 2011-03-08
- Inventor: Yong-Hwan Noh , Chul-Sung Park
- Applicant: Yong-Hwan Noh , Chul-Sung Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2007-0082745 20070817
- Main IPC: H03K19/0175
- IPC: H03K19/0175

Abstract:
Provided are a level shifter and a semiconductor device having an OFF-chip driver (OCD) using the same. The level shifter includes a plurality of series connected logic gates receiving a first-state input signal having a first power supply voltage level and generating a level-shifted first-state output signal having a second power supply voltage level. The logic gates receive as power supply voltages at least one intermediate power supply voltage having at least one voltage level intermediate between the first power supply voltage level and the second power supply voltage level, and an intermediate power supply voltage applied to the present logic gate is equal to or higher than an intermediate power supply voltage applied to the previous logic gate.
Public/Granted literature
- US20100194433A1 LEVEL SHIFTER AND SEMICONDUCTOR DEVICE HAVING OFF-CHIP DRIVER Public/Granted day:2010-08-05
Information query
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