Invention Grant
- Patent Title: Reference voltage generation circuit
- Patent Title (中): 参考电压发生电路
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Application No.: US12618373Application Date: 2009-11-13
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Publication No.: US07902913B2Publication Date: 2011-03-08
- Inventor: Ryu Ogiwara , Daisaburo Takashima
- Applicant: Ryu Ogiwara , Daisaburo Takashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-300535 20061106
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
According to an aspect of the present invention, there is provided a reference voltage generation circuit including: a first transistor having a first gate, a first source and a first drain; a second transistor having a second gate connected to the first gate, a second source connected to the first source and a second drain; a first diode connected between a ground and a V− node; a first resistor connected between the V− node and the first drain; a second diode and a second resistor connected between the ground and a V+ node; a third resistor connected between the V+ node and the first drain; an operational amplifier including input ports connected to the V+ node and the V− node and an output port connected to the first gate and the second gate; and a fourth resistor connected between the ground and the second drain.
Public/Granted literature
- US20100060346A1 REFERENCE VOLTAGE GENERATION CIRCUIT Public/Granted day:2010-03-11
Information query
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