Invention Grant
- Patent Title: Frequency monitoring to detect plasma process abnormality
- Patent Title (中): 频率监测检测等离子体过程异常
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Application No.: US11682290Application Date: 2007-03-05
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Publication No.: US07902991B2Publication Date: 2011-03-08
- Inventor: Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
- Applicant: Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert J. Stern
- Main IPC: G08B21/00
- IPC: G08B21/00

Abstract:
Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
Public/Granted literature
- US20080074255A1 Frequency Monitoring to Detect Plasma Process Abnormality Public/Granted day:2008-03-27
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