Invention Grant
- Patent Title: Semiconductor device structure and semiconductor device incorporating same
- Patent Title (中): 半导体器件结构和结合其的半导体器件
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Application No.: US12039532Application Date: 2008-02-28
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Publication No.: US07903427B2Publication Date: 2011-03-08
- Inventor: Kohzoh Itoh , Kazuhiro Kawamoto
- Applicant: Kohzoh Itoh , Kazuhiro Kawamoto
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2007-048453 20070228
- Main IPC: H05K1/16
- IPC: H05K1/16

Abstract:
A semiconductor device structure includes a semiconductor substrate, a resistor layer, and a capacitor layer. The resistor layer is configured to overlie the semiconductor substrate. The resistor layer has a resistor disposed therewithin. The capacitor layer is configured to overlie the resistor layer. The capacitor layer has a capacitor disposed over and electrically connected with the resistor. Further, a semiconductor device that generates a constant output voltage from an input voltage includes a semiconductor substrate, a resistor layer, and a capacitor layer. The resistor layer is configured to overlie the semiconductor substrate. The resistor layer has a resistor disposed therewithin. The capacitor layer is configured to overlie the resistor layer. The capacitor layer has a capacitor disposed over and electrically connected with the resistor.
Public/Granted literature
- US20080203981A1 SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTOR DEVICE INCORPORATING SAME Public/Granted day:2008-08-28
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