Invention Grant
US07903445B2 Photonic memory device, data storing method using the photonic memory device and photonic sensor device 有权
光子存储器件,使用光子存储器件和光子传感器器件的数据存储方法

  • Patent Title: Photonic memory device, data storing method using the photonic memory device and photonic sensor device
  • Patent Title (中): 光子存储器件,使用光子存储器件和光子传感器器件的数据存储方法
  • Application No.: US12516192
    Application Date: 2006-12-18
  • Publication No.: US07903445B2
    Publication Date: 2011-03-08
  • Inventor: Byung-Youn SongJung-Hoon Lee
  • Applicant: Byung-Youn SongJung-Hoon Lee
  • Applicant Address: KR Seoul
  • Assignee: LG Electronics, Inc.
  • Current Assignee: LG Electronics, Inc.
  • Current Assignee Address: KR Seoul
  • Agency: Lee, hong, Degerman, Kang & Waimey
  • Priority: KR10-2006-0117077 20061124
  • International Application: PCT/KR2006/005533 WO 20061218
  • International Announcement: WO2008/062921 WO 20080529
  • Main IPC: G11C13/00
  • IPC: G11C13/00
Photonic memory device, data storing method using the photonic memory device and photonic sensor device
Abstract:
Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.
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