A method, system and computer program product for programming a plurality of programmable resistive memory cells is disclosed. The method comprises executing the following for each memory cell: reading a resistance of a memory cell and reading input data corresponding to the memory cell. The method further comprises executing the following for each memory cell: programming the memory cell to a lower resistance (SET) state if the resistance is at a higher resistance state and the input data corresponds to a first (SET) state and programming the memory cell to a higher resistance (RESET) state if the resistance is at a lower resistance state and the input data corresponds to a second (RESET) state.