Invention Grant
- Patent Title: Storage apparatus including non-volatile SRAM
- Patent Title (中): 存储设备包括非易失性SRAM
-
Application No.: US12404510Application Date: 2009-03-16
-
Publication No.: US07903451B2Publication Date: 2011-03-08
- Inventor: Yutaka Yamada , Tatsunori Kanai , Masaya Tarui , Keiko Abe
- Applicant: Yutaka Yamada , Tatsunori Kanai , Masaya Tarui , Keiko Abe
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2008-246744 20080925
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having a third state and a fourth state, wherein the first storage element is brought into the first state when a current flows from the first storage element to the first storage element and is brought into the second state when the current flows from the first storage element to the first storage element, wherein the second storage element is brought into the fourth state when a current flows from the second storage element to the second storage element and is brought into the third state when the current flows from the second storage element to the second storage element.
Public/Granted literature
- US20100073991A1 STORAGE APPARATUS Public/Granted day:2010-03-25
Information query