Invention Grant
- Patent Title: Magnetoresistive memory cell
- Patent Title (中): 磁阻记忆体
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Application No.: US11473531Application Date: 2006-06-23
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Publication No.: US07903452B2Publication Date: 2011-03-08
- Inventor: Rok Dittrich , Ulrich Klostermann
- Applicant: Rok Dittrich , Ulrich Klostermann
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,Altis Semiconductor, SNC
- Current Assignee: Qimonda AG,Altis Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Main IPC: G11C11/16
- IPC: G11C11/16
Abstract:
A magnetoresistive memory cell has a magnetic stack providing an effective anisotropy field of a storage layer of the magnetic stack during thermal select heating, at least one line providing at least one external magnetic field to the magnetic stack, the effective anisotropy field and the at least one external magnetic field having a non-zero angle relative to one another.
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