Invention Grant
US07903454B2 Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit
有权
集成电路，存储单元阵列，存储器模块和操作集成电路的方法
- Patent Title: Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit
- Patent Title (中): 集成电路，存储单元阵列，存储器模块和操作集成电路的方法
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Application No.: US12114466Application Date: 2008-05-02
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Publication No.: US07903454B2Publication Date: 2011-03-08
- Inventor: Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
- Applicant: Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a programming current. The integrated circuit is configured such that the heating current and the programming current can be routed respectively to the first and the second portion of the conductive line independently from each other.
Public/Granted literature
- US20090273966A1 Integrated Circuit, Memory Cell Array, Memory Module, and Method of Operating an Integrated Circuit Public/Granted day:2009-11-05
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