Invention Grant
- Patent Title: Magnetic memory device
- Patent Title (中): 磁存储器件
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Application No.: US12328546Application Date: 2008-12-04
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Publication No.: US07903455B2Publication Date: 2011-03-08
- Inventor: Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
- Applicant: Mai Nozawa , Masanori Furuta , Daisuke Kurose , Tsutomu Sugawara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-048577 20080228
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetic memory device including a plurality of word lines, a plurality of bit lines which intersect the word lines and are put into groups, a plurality of memory cells which are arranged at intersections between the bit lines and the word lines, each memory cell including a magnetic element and a transistor which are connected in series, a first decoder which sequentially selects the word lines, a second decoder which sequentially drives the bit lines of each group, a weighting adder which performs weighting addition of currents flowing on bit lines in a selected group to generate an added current signal, a current/voltage converter which converts the added current signal into a voltage signal, and an analog-to-digital converter which digitizes the voltage signal.
Public/Granted literature
- US20090219753A1 MAGNETIC MEMORY DEVICE Public/Granted day:2009-09-03
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