Invention Grant
- Patent Title: Increased NAND flash memory read throughput
- Patent Title (中): 增加NAND闪存读取吞吐量
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Application No.: US12425200Application Date: 2009-04-16
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Publication No.: US07903463B2Publication Date: 2011-03-08
- Inventor: Dzung H. Nguyen , Frankie F. Roohparvar
- Applicant: Dzung H. Nguyen , Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A method of reading sequential pages of flash memory from alternating memory blocks comprises loading data from a first page into a first primary data cache and a second page into a second primary data cache simultaneously, the first and second pages loaded from different blocks of flash memory. Data from the first primary data cache is stored in a first secondary data cache, and data from the second primary data cache is stored in a second secondary data cache. Data is sequentially provided from the first and second secondary data caches by a multiplexer coupled to the first and second data caches.
Public/Granted literature
- US20090201736A1 INCREASED NAND FLASH MEMORY READ THROUGHPUT Public/Granted day:2009-08-13
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