A method for programming and erasing a PHINES memory device is comprising providing one or more additional pulses that are associated with a program or erase pulse, wherein the additional pulses are of similar polarity, but of lesser magnitude than the program or erase pulses. For an erase pulse on a PHINES memory device, two additional pulses can be utilized. For a program pulse on the source-side of a PHINES memory device, one additional pulse can be utilized that comprises a negative bias measured from a gate of the memory device to a source of the memory device. For a program pulse on the drain-side of a PHINES memory device, one additional pulse can be utilized that comprises a negative bias measured from a gate of the memory device to a drain of the memory device.