A semiconductor storage device includes: a memory section including memory cell groups; a redundancy circuit which stops to access the memory section when the redundancy circuit section is activated, and to activate one of the redundancy memory cell groups corresponding to an address signal when the redundancy circuit section is activated; a redundancy decoder which accesses one of the redundancy memory cell groups corresponding to an input selection signal; and a decoder which accesses one of the memory cell groups corresponding to an input address signal, and stops to access the memory cell groups in response to a selection signal. In a normal mode, an access to the redundancy memory section is permitted. In a redundancy circuit inactivation mode, an access to the redundancy memory section is prohibited. Memory tests of a storage device under various conditions can be performed in a short time.