Invention Grant
US07903483B2 Integrated circuit having memory with configurable read/write operations and method therefor
有权
具有可配置读/写操作的存储器的集成电路及其方法
- Patent Title: Integrated circuit having memory with configurable read/write operations and method therefor
- Patent Title (中): 具有可配置读/写操作的存储器的集成电路及其方法
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Application No.: US12275622Application Date: 2008-11-21
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Publication No.: US07903483B2Publication Date: 2011-03-08
- Inventor: Andrew C. Russell , Shayan Zhang
- Applicant: Andrew C. Russell , Shayan Zhang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Daniel D. Hill
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An integrated circuit having a memory and a method for operating the memory are provided. The method for operating the memory comprises: accessing a first portion of the memory, the first portion having a first access margin; detecting an error in the first portion of the memory; changing the first access margin to a second access margin, the second access margin being different than the first access margin; determining that the error is corrected with the first portion having the second access margin; and storing an access assist bit in a first storage element, the access assist bit corresponding to the first portion, wherein the assist bit, when set, indicates that subsequent accesses to the first portion are accomplished at the second access margin.
Public/Granted literature
- US20100128541A1 INTEGRATED CIRCUIT HAVING MEMORY WITH CONFIGURABLE READ/WRITE OPERATIONS AND METHOD THEREFOR Public/Granted day:2010-05-27
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