A semiconductor device reduces unnecessary operating current while an internal row/column address is generated. The semiconductor memory device includes an address input unit for transferring an address signal input from an external device; an internal column address generating unit for receiving the transferred address signal to generate an internal column address; an internal row address generating unit for receiving the transferred address signal to generate an internal row address; and an internal address control unit for controlling the internal row address generating unit in response to an activated states of banks in the semiconductor memory device.