Invention Grant
US07904667B2 Systems and methods for monitoring and controlling binary state devices using a memory device
失效
使用存储设备监控和控制二进制状态设备的系统和方法
- Patent Title: Systems and methods for monitoring and controlling binary state devices using a memory device
- Patent Title (中): 使用存储设备监控和控制二进制状态设备的系统和方法
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Application No.: US11503431Application Date: 2006-08-10
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Publication No.: US07904667B2Publication Date: 2011-03-08
- Inventor: Yunsheng Wang , Casey Springer , Tak Kwong Wong , Bill Beane
- Applicant: Yunsheng Wang , Casey Springer , Tak Kwong Wong , Bill Beane
- Applicant Address: US CA San Jose
- Assignee: Integrated Device Technology, Inc.
- Current Assignee: Integrated Device Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Hayes Boone LLP
- Main IPC: G06F13/20
- IPC: G06F13/20
Abstract:
A static random access memory (SRAM) includes an input read register (IRR) for monitoring the state of external binary devices and an output drive register (ODR) for controlling the state of external binary devices. The SRAM can be a multi-port device for access by multiple processors or controllers. Each bit of the IRR can mirror the state of a connected external binary device. Each bit of the ODR can manipulate the state of a connected external binary device or can be read without changing the state. The memory device may include settable controlling bits and a set of controlled register bits. Setting the one or more controlling bits may define which controlled register bits are associated with the IRR and which are associated with the ODR.
Public/Granted literature
- US20060277372A1 Systems and methods for monitoring and controlling binary state devices using a memory device Public/Granted day:2006-12-07
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