Invention Grant
- Patent Title: Local skew detecting circuit for semiconductor memory apparatus
- Patent Title (中): 半导体存储装置局部偏斜检测电路
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Application No.: US11963166Application Date: 2007-12-21
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Publication No.: US07904742B2Publication Date: 2011-03-08
- Inventor: Hong-Sok Choi
- Applicant: Hong-Sok Choi
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0070405 20070713
- Main IPC: G06F1/00
- IPC: G06F1/00 ; H03K19/00 ; H03L7/00 ; G11C5/06 ; G11C21/00 ; G06F12/00 ; G06F17/50

Abstract:
A local skew detecting circuit for a semiconductor integrated circuit includes a reference delay block that receives a test signal and generates a reference delay signal by delaying the test signal by a predetermined delay time, and a first timing detecting block coupled with the reference delay block, the first timing detecting block configured to receive the test signal, generate a first delay signal by delaying the test signal by the same predetermined delay time, and detect an enable timing order of the reference delay signal and the first delay signal to generate a first detection signal.
Public/Granted literature
- US20090015307A1 LOCAL SKEW DETECTING CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-01-15
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