Invention Grant
- Patent Title: Flash memory device error correction code controllers and related methods and memory systems
- Patent Title (中): 闪存设备纠错码控制器及相关方法和存储系统
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Application No.: US11692992Application Date: 2007-03-29
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Publication No.: US07904790B2Publication Date: 2011-03-08
- Inventor: Chang-Duck Lee , Seok-won Heo , Si-Yung Park , Dong-Ryoul Lee
- Applicant: Chang-Duck Lee , Seok-won Heo , Si-Yung Park , Dong-Ryoul Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2007-0002090 20070108
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An ECC controller for a flash memory device storing M-bit data (M: a positive integer equal to or greater than 2) includes an encoder and a decoder. The encoder generates first ECC data for input data to be stored in the flash memory device using a first error correction scheme and generates second ECC data for the input data using a second error correction scheme. The input data, the first ECC data, and the second ECC data are stored in the flash memory device. The decoder calculates the number of errors in data read from the flash memory device and corrects the errors in the read data using one of the first ECC data and the second ECC data selectively based on the number of the errors.
Public/Granted literature
- US20080168319A1 Flash memory Device Error Correction Code Controllers and Related Methods and Memory Systems Public/Granted day:2008-07-10
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