Invention Grant
- Patent Title: Temperature sensor
- Patent Title (中): 温度感应器
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Application No.: US12117699Application Date: 2008-05-08
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Publication No.: US07905657B2Publication Date: 2011-03-15
- Inventor: Je Il Ryu
- Applicant: Je Il Ryu
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2007-0140149 20071228
- Main IPC: G01K7/00
- IPC: G01K7/00

Abstract:
A temperature sensor that can be used in semiconductor devices includes a reference voltage generator for dividing a power supply voltage and outputting a reference voltage, a compare voltage generator for outputting compare voltages with different levels depending on a change of a control signal, a temperature voltage generator for generating a temperature voltage based on the reference voltage and a threshold voltage of a MOS transistor, and a comparator for comparing an amplified temperature voltage and the compare voltage.
Public/Granted literature
- US20090168841A1 TEMPERATURE SENSOR Public/Granted day:2009-07-02
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