Invention Grant
US07906045B2 Method of manufacture of semiconductor device and conductive compositions used therein
有权
其中使用的半导体器件和导电组合物的制造方法
- Patent Title: Method of manufacture of semiconductor device and conductive compositions used therein
- Patent Title (中): 其中使用的半导体器件和导电组合物的制造方法
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Application No.: US12127969Application Date: 2008-05-28
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Publication No.: US07906045B2Publication Date: 2011-03-15
- Inventor: Yueli L. Wang , Alan Frederick Carroll , Kenneth Warren Hang , Richard John Sheffield Young
- Applicant: Yueli L. Wang , Alan Frederick Carroll , Kenneth Warren Hang , Richard John Sheffield Young
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01B1/22
- IPC: H01B1/22 ; B05D5/12 ; H01L31/0224
Abstract:
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
Public/Granted literature
- US20080223446A1 METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN Public/Granted day:2008-09-18
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