Invention Grant
- Patent Title: Method of fabricating interferometric devices using lift-off processing techniques
- Patent Title (中): 使用剥离处理技术制造干涉仪的方法
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Application No.: US12494032Application Date: 2009-06-29
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Publication No.: US07906353B2Publication Date: 2011-03-15
- Inventor: Clarence Chui , Ming-Hau Tung
- Applicant: Clarence Chui , Ming-Hau Tung
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Embodiments of the present disclosure include a method of fabricating interferometric devices using lift-off processing techniques. Use of lift-off processing in the fabrication of various layers of interferometric modulators, such as an optical stack or a flex layer, advantageously avoids individualized chemistries associated with the plurality of materials associated with each layer thereof. Moreover, use of lift-off processing allows much greater selection in both materials and facilities available for fabrication of interferometric modulators.
Public/Granted literature
- US20090262412A1 METHOD OF FABRICATING INTERFEROMETRIC DEVICES USING LIFT-OFF PROCESSING TECHNIQUES Public/Granted day:2009-10-22
Information query
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