Invention Grant
US07906394B1 Implanted vertical source-line under straight stack for FLASH EPROM
有权
嵌入垂直源线在FLASH EPROM的直堆栈下
- Patent Title: Implanted vertical source-line under straight stack for FLASH EPROM
- Patent Title (中): 嵌入垂直源线在FLASH EPROM的直堆栈下
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Application No.: US09594118Application Date: 2000-06-14
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Publication No.: US07906394B1Publication Date: 2011-03-15
- Inventor: Freidoon Mehrod , Kyle A. Picone
- Applicant: Freidoon Mehrod , Kyle A. Picone
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/425
Abstract:
In FLASH EPROM cells, source diffusion continuity between horizontal and vertical source lines is provided by an arsenic implant under the stack in vertical source lines.
Information query
IPC分类:
