Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12336487Application Date: 2008-12-16
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Publication No.: US07906398B2Publication Date: 2011-03-15
- Inventor: Sang-Hoon Park , Yun-Seok Cho , Sang-Hoon Cho , Chun-Hee Lee
- Applicant: Sang-Hoon Park , Yun-Seok Cho , Sang-Hoon Cho , Chun-Hee Lee
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0031477 20080404
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes.
Public/Granted literature
- US20090253254A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2009-10-08
Information query
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