Invention Grant
- Patent Title: Polysilicon structures resistant to laser anneal lightpipe waveguide effects
- Patent Title (中): 多晶硅结构耐激光退火光波导效应
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Application No.: US12047702Application Date: 2008-03-13
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Publication No.: US07906405B2Publication Date: 2011-03-15
- Inventor: Joe W. McPherson , Ajit Shanware
- Applicant: Joe W. McPherson , Ajit Shanware
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements.
Public/Granted literature
- US20090161290A1 POLYSILICON STRUCTURES RESISTANT TO LASER ANNEAL LIGHTPIPE WAVEGUIDE EFFECTS Public/Granted day:2009-06-25
Information query
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