Laser annealing method for manufacturing semiconductor device

Invention Grant

US07906419B2 Laser annealing method for manufacturing semiconductor device 失效

Title translation: 用于制造半导体器件的激光退火方法

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Patent Title: Laser annealing method for manufacturing semiconductor device
Patent Title (中): 用于制造半导体器件的激光退火方法
Application No.: US12275332

Application Date: 2008-11-21
Publication No.: US07906419B2

Publication Date: 2011-03-15
Inventor: Jae Soo Kim , Cheol Hwan Park , Ho Jin Cho
Applicant: Jae Soo Kim , Cheol Hwan Park , Ho Jin Cho
Applicant Address: KR Gyeonggi-do
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: Ladas & Parry LLP
Priority: KR10-2008-0029148 20080328
Main IPC: H01L21/3205
IPC: H01L21/3205

Laser annealing method for manufacturing semiconductor device

Abstract:

A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

Abstract(Chinese):

提出了一种用于制造半导体器件的激光退火方法。该方法包括至少两个形成步骤和一个退火步骤。第一形成步骤包括在半导体衬底上形成栅极。第二形成步骤包括在半导体衬底上和栅极上形成绝缘层。退火步骤包括使用从激光发射的电磁辐射对绝缘层进行退火。

Public/Granted literature

US20090246950A1 LASER ANNEALING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-10-01

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）