Invention Grant
- Patent Title: Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
- Patent Title (中): 使用红外辐射和加热控制硅晶片中的氧沉淀
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Application No.: US11441065Application Date: 2006-05-26
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Publication No.: US07906443B2Publication Date: 2011-03-15
- Inventor: Katsuto Tanahashi , Hiroshi Kaneta
- Applicant: Katsuto Tanahashi , Hiroshi Kaneta
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2006-038547 20060215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04 ; B23K26/00
Abstract:
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.
Public/Granted literature
- US20070190809A1 Wafer processing method, semiconductor device manufacturing method, and wafer processing apparatus Public/Granted day:2007-08-16
Information query
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