Invention Grant
- Patent Title: Superlattice nanopatterning of wires and complex patterns
- Patent Title (中): 电线和复杂图案的超晶格纳米图案
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Application No.: US11633043Application Date: 2006-12-04
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Publication No.: US07906775B2Publication Date: 2011-03-15
- Inventor: James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
- Applicant: James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno LLP
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.
Public/Granted literature
- US20100258785A1 Superlattice nanopatterning of wires and complex patterns Public/Granted day:2010-10-14
Information query
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