Invention Grant
- Patent Title: Semiconductor thin film and method for manufacturing same, and thin film transistor
- Patent Title (中): 半导体薄膜及其制造方法，以及薄膜晶体管
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Application No.: US12093827Application Date: 2006-11-16
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Publication No.: US07906777B2Publication Date: 2011-03-15
- Inventor: Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka
- Applicant: Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2005-334502 20051118
- International Application: PCT/JP2006/322809 WO 20061116
- International Announcement: WO2007/058232 WO 20070524
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film 40.
Public/Granted literature
- US20090267064A1 SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING SAME, AND THIN FILM TRANSISTOR Public/Granted day:2009-10-29
Information query
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