Invention Grant
- Patent Title: Semiconductor element and a method for producing the same
- Patent Title (中): 半导体元件及其制造方法
-
Application No.: US12361418Application Date: 2009-01-28
-
Publication No.: US07906802B2Publication Date: 2011-03-15
- Inventor: Peter Baumgartner , Domagoj Siprak
- Applicant: Peter Baumgartner , Domagoj Siprak
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/085
- IPC: H01L27/085
Abstract:
Some embodiments comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins. At least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Public/Granted literature
- US20100187575A1 Semiconductor Element and a Method for Producing the Same Public/Granted day:2010-07-29
Information query
IPC分类:
