Invention Grant
US07906811B2 Semiconductor device with protection element disposed around a formation region of a transistor
有权
具有保护元件的半导体器件设置在晶体管的形成区域周围
- Patent Title: Semiconductor device with protection element disposed around a formation region of a transistor
- Patent Title (中): 具有保护元件的半导体器件设置在晶体管的形成区域周围
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Application No.: US11738621Application Date: 2007-04-23
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Publication No.: US07906811B2Publication Date: 2011-03-15
- Inventor: Seiji Otake
- Applicant: Seiji Otake
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd. (Osaka)
- Current Assignee: Sanyo Electric Co., Ltd. (Osaka)
- Current Assignee Address: JP Osaka
- Agency: Fish & Richardson P.C.
- Priority: JP2006-119652 20060424
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, a MOS transistor is formed. Around the MOS transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the MOS transistor. By use of this structure, when negative ESD surge is applied to a pad for a source electrode, the PN junction region of the protection element breaks down. Accordingly, the MOS transistor can be protected.
Public/Granted literature
- US20070246738A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2007-10-25
Information query
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