Invention Grant
US07906816B2 Semiconductor integrated circuit device including memory cells having floating gates and resistor elements
有权
包括具有浮动栅极和电阻元件的存储单元的半导体集成电路器件
- Patent Title: Semiconductor integrated circuit device including memory cells having floating gates and resistor elements
- Patent Title (中): 包括具有浮动栅极和电阻元件的存储单元的半导体集成电路器件
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Application No.: US11346292Application Date: 2006-02-03
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Publication No.: US07906816B2Publication Date: 2011-03-15
- Inventor: Kikuko Sugimae , Takeshi Kamigaichi
- Applicant: Kikuko Sugimae , Takeshi Kamigaichi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-159391 20050531
- Main IPC: H01L27/11
- IPC: H01L27/11
Abstract:
A semiconductor integrated circuit device includes an element isolation region which is formed in a semiconductor substrate to isolate an element region of the semiconductor substrate, memory cells having floating gates and formed on the element region, and resistor elements formed on the element region. The floating gate has a laminated structure containing a plurality of conductive films. The resistor element has a contact portion for connection with a wiring and a resistor portion acting as a resistor. The resistor portion has a laminated structure having at least one of the plurality of conductive films and an insulating material having a selective etching ratio with respect to the semiconductor substrate.
Public/Granted literature
- US20060267143A1 Semiconductor integrated circuit device and manufacturing method thereof Public/Granted day:2006-11-30
Information query
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