Invention Grant
US07906829B2 Semiconductor device having first and second insulation separation regions
有权
具有第一和第二绝缘分离区域的半导体器件
- Patent Title: Semiconductor device having first and second insulation separation regions
- Patent Title (中): 具有第一和第二绝缘分离区域的半导体器件
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Application No.: US11447021Application Date: 2006-06-06
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Publication No.: US07906829B2Publication Date: 2011-03-15
- Inventor: Akira Tai
- Applicant: Akira Tai
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2005-172680 20050613
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.
Public/Granted literature
- US20060278950A1 Semiconductor device having first and second insulation separation regions Public/Granted day:2006-12-14
Information query
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