Semiconductor device with capacitor arrangement electrically coupled to inductor coil

Invention Grant

US07906831B2 Semiconductor device with capacitor arrangement electrically coupled to inductor coil 有权

Title translation: 具有电耦合到电感线圈的电容器布置的半导体器件

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Patent Title: Semiconductor device with capacitor arrangement electrically coupled to inductor coil
Patent Title (中): 具有电耦合到电感线圈的电容器布置的半导体器件
Application No.: US12235614

Application Date: 2008-09-23
Publication No.: US07906831B2

Publication Date: 2011-03-15
Inventor: Peter Baumgartner , Philipp Riess
Applicant: Peter Baumgartner , Philipp Riess
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Infineon Technologies
Agent Philip H. Schlazer
Main IPC: H01L29/94
IPC: H01L29/94

Semiconductor device with capacitor arrangement electrically coupled to inductor coil

Abstract:

One or more embodiments relate to a semiconductor device, comprising: a inductor coil including a winding; and a capacitor arrangement including at least one capacitor, the capacitor arrangement electrically coupled to the inductor coil, the footprint of the capacitor arrangement at least partially overlapping the footprint of the inductor coil.

Abstract(Chinese):

一个或多个实施例涉及半导体器件，包括：包括绕组的电感线圈; 以及电容器布置，其包括至少一个电容器，所述电容器布置电耦合到所述电感器线圈，所述电容器布置的所述覆盖区至少部分地与所述电感器线圈的覆盖区重叠。

Public/Granted literature

US20100072572A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-03-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS