Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12155055Application Date: 2008-05-29
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Publication No.: US07906847B2Publication Date: 2011-03-15
- Inventor: Hisashi Ohtani , Eiji Sugiyama
- Applicant: Hisashi Ohtani , Eiji Sugiyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-151168 20070607
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
To provide a semiconductor device which can increase reliability with respect to external force, especially pressing force, while the circuit size or the capacity of memory is maintained. A pair of structure bodies each having a stack of fibrous bodies of an organic compound or an inorganic compound, which includes a plurality of layers, especially three or more layers, is impregnated with an organic resin, and an element layer provided between the pair of structure bodies are included. The element layer and the structure body can be fixed to each other by heating and pressure bonding. Further, a layer for fixing the element layer and the structure body may be provided. Alternatively, the structure body fixed to an element layer can be formed in such a way that after a plurality of fibrous bodies is stacked over the element layer, the fibrous bodies are impregnated with an organic resin.
Public/Granted literature
- US20080303140A1 Semiconductor device Public/Granted day:2008-12-11
Information query
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