Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12389071Application Date: 2009-02-19
-
Publication No.: US07906848B2Publication Date: 2011-03-15
- Inventor: Yukihiro Kumagai , Hiroyuki Ohta , Naotaka Tanaka , Masahiko Fujisawa , Akihiko Ohsaki
- Applicant: Yukihiro Kumagai , Hiroyuki Ohta , Naotaka Tanaka , Masahiko Fujisawa , Akihiko Ohsaki
- Applicant Address: JP Kawasaki
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki
- Agency: Mattingly & Malur, P.C.
- Priority: JP2008-045666 20080227
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
In a semiconductor device having a Low-k film as an interlayer insulator, peeling of the interlayer insulator in a thermal cycle test is prevented, thereby providing a highly reliable semiconductor device. In a semiconductor device having a structure in which interlayer insulators in which buried wires each having a main electric conductive layer made of copper are formed and cap insulators of the buried wires are stacked, the cap insulator having a relatively high Young's modulus and contacting by its upper surface with the interlayer insulator made of a Low-k film having a relatively low Young's modulus is formed so as not to be provided in an edge portion of the semiconductor device.
Public/Granted literature
- US20090212437A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-08-27
Information query
IPC分类:
