Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12109664Application Date: 2008-04-25
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Publication No.: US07906856B2Publication Date: 2011-03-15
- Inventor: Toshiya Ishio
- Applicant: Toshiya Ishio
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-120202 20070427; JP2008-029697 20080208; JP2008-111047 20080422
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device has a semiconductor chip provided with an insulating layer formed so as to be thinner in a first secondary-wire-free area than in a first secondary-wire-containing area. Further, the semiconductor chip has an edge extending further outward than a side wall, which severs as an edge of an upper insulating layer, in an extending direction of a circuit-forming surface of the semiconductor chip on which electrode pads are provided. This makes it possible to provide a semiconductor device capable of suppressing electromagnetic interference between a secondary wire and an electronic circuit of a semiconductor chip and the curvature of a wafer even in the case of overlap between the secondary wire and the electronic circuit, and of reducing the risk of occurrence of chipping in a dicing step.
Public/Granted literature
- US20080272500A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-11-06
Information query
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