Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11925312Application Date: 2007-10-26
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Publication No.: US07906860B2Publication Date: 2011-03-15
- Inventor: Thorsten Meyer , Markus Brunnbauer , Marcus Kastner , Stephan Bradl
- Applicant: Thorsten Meyer , Markus Brunnbauer , Marcus Kastner , Stephan Bradl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
A semiconductor device is disclosed. One embodiment provides an arrangement of a plurality of semiconductor chips arranged side by side in a spaced apart relationship. A first material fills at least partly the spacings between adjacent semiconductor chips. A second material is arranged over the semiconductor chips and the first material. A coefficient of thermal expansion of the first material is selected to adapt the lateral thermal expansion of the arrangement in a plane intersecting the first material and the semiconductor chips to the lateral thermal expansion of the arrangement in a plane intersecting the second material.
Public/Granted literature
- US20090108440A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-04-30
Information query
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