Invention Grant
- Patent Title: High frequency amplifier
- Patent Title (中): 高频放大器
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Application No.: US12514159Application Date: 2006-11-30
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Publication No.: US07907009B2Publication Date: 2011-03-15
- Inventor: Kazutomi Mori , Kazuhiro Iyomasa , Akira Ohta , Teruyuki Shimura , Masatoshi Nakayama
- Applicant: Kazutomi Mori , Kazuhiro Iyomasa , Akira Ohta , Teruyuki Shimura , Masatoshi Nakayama
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2006/323991 WO 20061130
- International Announcement: WO2008/068809 WO 20080612
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
Provided is a high frequency amplifier including two amplifying elements of different element sizes connected in parallel and switching the amplifying elements in accordance with a level of output power. In particular, the high frequency amplifier includes an output matching circuit for matching to characteristic impedance (50 ohms) both when the output power is high and low, and increasing impedance when the turned-off amplifying element is viewed from a connection node on an output side of the two amplifying elements. Consequently, characteristics such as high output power and high efficiency can be achieved and it is possible to prevent an amplified high frequency signal from passing around to a matching circuit on a turned-off amplifying element side.
Public/Granted literature
- US20100033241A1 HIGH FREQUENCY AMPLIFIER Public/Granted day:2010-02-11
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