Invention Grant
- Patent Title: Memory having circuitry controlling the voltage differential between the word line and array supply voltage
- Patent Title (中): 存储器具有控制字线和阵列电源电压之间的电压差的电路
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Application No.: US11931098Application Date: 2007-10-31
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Publication No.: US07907456B2Publication Date: 2011-03-15
- Inventor: Theodore W. Houston , Andrew Marshall
- Applicant: Theodore W. Houston , Andrew Marshall
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/00

Abstract:
An integrated circuit (IC) includes at least one memory array having a plurality of memory cells arranged in a plurality of rows and columns, the array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells. A voltage differential generating circuit is operable to provide a differential wordline voltage (VWL) relative to an array supply voltage, wherein the differential is a function of the array supply voltage.
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