Invention Grant
US07908530B2 Memory module and on-line build-in self-test method thereof for enhancing memory system reliability
有权
内存模块和在线内置自检方法,用于提高内存系统的可靠性
- Patent Title: Memory module and on-line build-in self-test method thereof for enhancing memory system reliability
- Patent Title (中): 内存模块和在线内置自检方法,用于提高内存系统的可靠性
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Application No.: US12405032Application Date: 2009-03-16
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Publication No.: US07908530B2Publication Date: 2011-03-15
- Inventor: Cheng-Chien Chen
- Applicant: Cheng-Chien Chen
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/00 ; G06F13/24 ; G06F12/06 ; G06F13/28 ; G01R31/28

Abstract:
A memory module including a plurality of memory banks, a memory control unit, and a built-in self-test (BIST) control unit is provided. The memory banks store data. The memory control unit accesses the data in accordance with a system command. The BIST control unit generates a BIST command to the memory control unit when a BIST function is enabled in the memory module. While the system command accessing the data in a specific memory bank exists, the memory command control unit has the priority to execute the system command instead of the BIST command testing the specific memory bank. Memory reliability of a system including the memory module is enhanced without reducing the system effectiveness.
Public/Granted literature
- US20100235691A1 MEMORY MODULE AND ON-LINE BUILD-IN SELF-TEST METHOD THEREOF FOR ENHANCING MEMORY SYSTEM RELIABILITY Public/Granted day:2010-09-16
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