Invention Grant
- Patent Title: Wafer level sensing package and manufacturing process thereof
- Patent Title (中): 晶圆级感测封装及其制造工艺
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Application No.: US12331539Application Date: 2008-12-10
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Publication No.: US07915065B2Publication Date: 2011-03-29
- Inventor: Lung-Tai Chen , Chun-Hsun Chu , Tzong-Che Ho , Bor-Chen Tsai
- Applicant: Lung-Tai Chen , Chun-Hsun Chu , Tzong-Che Ho , Bor-Chen Tsai
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Rabin & Berdo, P.C.
- Priority: TW96143100A 20071114
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.
Public/Granted literature
- US20090124074A1 WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF Public/Granted day:2009-05-14
Information query
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