Invention Grant
US07915602B2 Phase change memory device and fabrication method thereof 有权
相变存储器件及其制造方法

Phase change memory device and fabrication method thereof
Abstract:
A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0