Invention Grant
- Patent Title: Phase change memory device and fabrication method thereof
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US12379825Application Date: 2009-03-03
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Publication No.: US07915602B2Publication Date: 2011-03-29
- Inventor: Natsuki Sato
- Applicant: Natsuki Sato
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2008-051946 20080303
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/66 ; H01L21/70 ; H01L21/02

Abstract:
A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.
Public/Granted literature
- US20090218557A1 Phase change memory device and fabrication method thereof Public/Granted day:2009-09-03
Information query
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