Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12498696Application Date: 2009-07-07
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Publication No.: US07915615B2Publication Date: 2011-03-29
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Shunpei Yamazaki , Jun Koyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-044973 20000222
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
Public/Granted literature
- US07821004B2 Semiconductor device and method of manufacturing the same Public/Granted day:2010-10-26
Information query
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