Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12408810Application Date: 2009-03-23
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Publication No.: US07915630B2Publication Date: 2011-03-29
- Inventor: Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
- Applicant: Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-333300 20071225
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
Public/Granted literature
- US20090185589A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2009-07-23
Information query
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