Disclosed herein is a semiconductor integrated circuit including: a memory circuit section used for storing data; and a non-memory circuit section which is provided to serve as a section other than the memory circuit section and used for storing no data, wherein the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the non-memory circuit section is lower than the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the memory circuit section.