Integrated circuit

Invention Grant

Title translation: 集成电路

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Patent Title: Integrated circuit
Patent Title (中): 集成电路
Application No.: US11186402

Application Date: 2005-07-21
Publication No.: US07915676B2

Publication Date: 2011-03-29
Inventor: Nils Jensen , Marie Denison
Applicant: Nils Jensen , Marie Denison
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Maginot, Moore & Beck
Priority: DE102004035745 20040723
Main IPC: H01L29/94
IPC: H01L29/94

Abstract:

The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region (13) adjoining the first n-type region (11) is provided, the first p-type or n-type region (11) and the further n-type or p-type region (13) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.

Abstract(Chinese):

本发明涉及一种具有半导体元件（10）的集成电路，该半导体元件（10）包括第一p型区域（12）和毗邻第一p型区域（12）的第一n型区域（11），它们一起形成第一 pn结具有击穿电压。根据本发明，提供了邻接第一p型区域的另一个n型区域或与第一n型区域（11）相邻的另外的p型区域（13），第一p型或n型区域区域（11）和与之相邻的另外的n型或p型区域（13）一起形成具有另外的击穿电压的另外的pn结，所述第一pn结和所述另外的pn结可以彼此连接或连接这样一种方式，在半导体部件的过载的情况下，由于第一pn结的电流负载，首先进一步的pn结破裂。

Public/Granted literature

US20060071236A1 Integrated circuit Public/Granted day:2006-04-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS