Invention Grant
US07915711B2 Semiconductor assemblies and methods of manufacturing such assemblies including trenches in a molding material between semiconductor die
有权
半导体组件和制造这种组件的方法，包括在半导体管芯之间的模制材料中的沟槽
- Patent Title: Semiconductor assemblies and methods of manufacturing such assemblies including trenches in a molding material between semiconductor die
- Patent Title (中): 半导体组件和制造这种组件的方法，包括在半导体管芯之间的模制材料中的沟槽
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Application No.: US12696182Application Date: 2010-01-29
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Publication No.: US07915711B2Publication Date: 2011-03-29
- Inventor: Swee Kwang Chua , Suan Jeung Boon , Yoon Poo Chia
- Applicant: Swee Kwang Chua , Suan Jeung Boon , Yoon Poo Chia
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Priority: SG200706296-1 20070828
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/31 ; H01L21/469
Abstract:
Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches to an intermediate depth in a molded portion of a molded wafer having a plurality of dies arranged in rows and columns. The method also includes removing material from a second side of the molded portion at areas aligned with the first side trenches, wherein removing the material forms openings through the molded portion. The method further includes forming a plurality of electrical contacts at the second side of the molded portion at the openings and electrically connecting the second side contacts to corresponding bond-sites on the dies.
Public/Granted literature
- US20100133662A1 SEMICONDUCTOR ASSEMBLIES AND METHODS OF MANUFACTURING SUCH ASSEMBLIES Public/Granted day:2010-06-03
Information query
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