Invention Grant
US07915713B2 Field effect transistors with channels oriented to different crystal planes 有权
场效应晶体管,通道定向到不同的晶面

Field effect transistors with channels oriented to different crystal planes
Abstract:
An integrated circuit includes a first field effect transistor of a first carrier type and a second field effect transistor of a second, different carrier type. In a conductive state, a first channel of the first field effect transistor is oriented to one of a first set of equivalent crystal planes of a semiconductor substrate and a second channel of the second field effect transistor is oriented to at least one of a second, different set of equivalent crystal planes. The first set of equivalent crystal planes is parallel to a main surface of the semiconductor substrate and the second set of equivalent crystal planes is perpendicular to the main surface.
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