Invention Grant
- Patent Title: Field effect transistors with channels oriented to different crystal planes
- Patent Title (中): 场效应晶体管,通道定向到不同的晶面
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Application No.: US12182419Application Date: 2008-07-30
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Publication No.: US07915713B2Publication Date: 2011-03-29
- Inventor: Juergen Faul , Juergen Holz
- Applicant: Juergen Faul , Juergen Holz
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Edell, Shapiro & Finnan, LLC
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
An integrated circuit includes a first field effect transistor of a first carrier type and a second field effect transistor of a second, different carrier type. In a conductive state, a first channel of the first field effect transistor is oriented to one of a first set of equivalent crystal planes of a semiconductor substrate and a second channel of the second field effect transistor is oriented to at least one of a second, different set of equivalent crystal planes. The first set of equivalent crystal planes is parallel to a main surface of the semiconductor substrate and the second set of equivalent crystal planes is perpendicular to the main surface.
Public/Granted literature
- US20100025826A1 Field Effect Transistors with Channels Oriented to Different Crystal Planes Public/Granted day:2010-02-04
Information query
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