Invention Grant
US07915747B2 Substrate for forming semiconductor layer including alignment marks
有权
用于形成包括对准标记的半导体层的基板
- Patent Title: Substrate for forming semiconductor layer including alignment marks
- Patent Title (中): 用于形成包括对准标记的半导体层的基板
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Application No.: US11475167Application Date: 2006-06-27
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Publication No.: US07915747B2Publication Date: 2011-03-29
- Inventor: Keiichi Matsushita
- Applicant: Keiichi Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-187042 20050627; JP2005-266939 20050914
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer.
Public/Granted literature
- US20060292833A1 Substrate for forming semiconductor layer Public/Granted day:2006-12-28
Information query
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